(Forschungsverbund Berlin) G-ray Nanotech and IKZ have entered into a research and development collaboration covering the doping of gallium arsenide structures and the manufacturing of high purity crystals in wafer form factor for detector applications.
from EurekAlert! - Technology, Engineering and Computer Science https://ift.tt/2Vmucqe
Friday, March 1, 2019
G-ray Nanotech and IKZ join forces to develop detector-grade gallium arsenide wafers
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